Abstract
We report the lattice damage and annealing properties of the 500 keV Si+ ions implanted Nd:YVO4 crystal with different doses. The Rutherford backscattering spectrometry/channeling technique was used to analyze the damage profiles of ion-implanted samples. A series of post-implant annealing was performed at temperatures from 250 °C to 400 °C to investigate the relation between lattice damage profile and the waveguide formation. Implantations at doses of more than 5×10(14) ions/cm2 can result in high damage ratio in the near-surface region and the lattice structure cannot be restored even after annealing at 400 °C. Such seriously damaged lattice is relatively stable and contributes to the waveguide structure. Convergence of the refractive index at the surface region after ion implantation is believed mainly due to the elastic collisions with the target atoms caused by nuclear energy loss.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
