Abstract
A comprehensive investigation of the subthreshold behavior of a graded channel dual-material elliptical gate-all-around MOSFET has been presented in this research. Detailed analysis of the device’s immunity over the various short channel effects like threshold voltage roll-off, drain-induced barrier lowering, subthreshold swing and hot carrier effect have been conducted using the central potential where the latter has been derived using the quasi-3-D scaling length concept. The analytical results have been verified using ATLAS simulation data.
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