Abstract
We present an experimental method to quantify the series resistance R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a-Si/ITO</sub> through the a-Si:H layers and the a-Si:H/ITO interface on test structures. In order to optimize R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">a-Si/ITO</sub> , we apply different a-Si:H and ITO deposition parameters. We find the best value for R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(p)-a-Si/ITO</sub> of 0.42 Ω·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for an ITO double layer with a 10-nm-thin starting layer that provides good contact resistance and an additional 90-nm top layer that provides good conductivity. For R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(n)-a-Si/ITO</sub> , we reach values below 0.1 Ω·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . We present an analysis of the series resistance and shading losses of our 100-cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> bifacial screen-printed a-Si:H/cSi heterojunction solar cells, which show an open-circuit voltage of V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</sub> = 733 mV, demonstrating the excellent level of interface passivation. The efficiency of 20.2% is limited by a low short-circuit current density of 37.1 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and fill factor of 76%.
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