Abstract
A novel method of filling micron-size contact holes using the selective electroless metal deposition (SEMD) technique has been developed and demonstrated on advanced device technology. The selective process is based on the electroless deposition of palladium or nickel only in CoSi/sub 2/ or TiSi/sub 2/ based contact holes but not on dielectric films such as BPSG. Excellent planarization of contact holes and good electrical properties such as junction integrity, good transistor characteristics, and good contact resistance have been obtained. To improve the temperature stability of the contact material, selective W is deposited in TiSi/sub 2/-based contacts; good junction integrity and low contact resistance were obtained up to 450 degrees C. >
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