Abstract
An analysis of heat and mass transfer has been carried out for multiwafer low pressure chemical vapor deposition (LPCVD). A surface radiation analysis considering specular radiation among wafers, heater, quartz tube, and sidewalls of the reactor has been done to determine temperature distributions of 150 wafers in two dimensions spatially. Velocity, temperature, and concentration fields of chemical gases flowing in a reactor with multiwafers have then been determined and silicon deposition growth rate and uniformity in two dimensions on wafers have been investigated. The calculation results of temperatures and silicon deposition have been compared with the previous experiments and calculations and found to be in agreement with the previous experimental data. © 2000 The Electrochemical Society. All rights reserved.
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