Analysis of Power Transfer Efficiency of Standard Integrated Circuit Immunity Test Methods

Hai Au Huynh,Hak-Tae Lee,Soyoung Kim,Wansoo Nah

doi:10.1155/2015/497647

Hai Au Huynh, Hak-Tae Lee + Show 2 more

Open Access

https://doi.org/10.1155/2015/497647

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Abstract

Direct power injection (DPI) and bulk current injection (BCI) methods are defined in IEC 62132-3 and IEC 62132-4 as the electromagnetic immunity test method of integrated circuits (IC). The forward power measured at the RF noise generator when the IC malfunctions is used as the measure of immunity level of the IC. However, the actual power that causes failure in ICs is different from forward power measured at the noise source. Power transfer efficiency is used as a measure of power loss of the noise injection path. In this paper, the power transfer efficiencies of DPI and BCI methods are derived and validated experimentally with immunity test setup of a clock divider IC. Power transfer efficiency varies significantly over the frequency range as a function of the test method used and the IC input impedance. For the frequency range of 15 kHz to 1 GHz, power transfer efficiency of the BCI test was constantly higher than that of the DPI test. In the DPI test, power transfer efficiency is particularly low in the lower test frequency range up to 10 MHz. When performing the IC immunity tests following the standards, these characteristics of the test methods need to be considered.

Highlights

Advances in integrated circuit (IC) design technology have increased the density of transistors and made the structure of ICs more complex
IEC proposed standards for direct power injection (DPI) and bulk current injection (BCI) [1,2,3] methods to measure the conductive immunity of ICs to radio-frequency (RF) current and power induced by electromagnetic disturbance
We evaluated the RF noise immunity of the clock divider when noise was injected to the supply voltage, VDD

Summary

Introduction

Advances in integrated circuit (IC) design technology have increased the density of transistors and made the structure of ICs more complex. IEC proposed standards for direct power injection (DPI) and bulk current injection (BCI) [1,2,3] methods to measure the conductive immunity of ICs to radio-frequency (RF) current and power induced by electromagnetic disturbance. In the DPI method, the RF disturbance power is injected to ports of the device under test (DUT) via a coupling capacitor to cause failure in operation of the DUT. Power transfer efficiency was determined as the ratio of power transferred to the chip and the forward power at the RF generator This equation was confirmed by Agilent Design Systems (ADS) [5] simulation and applied to estimate the real injected power at the failure point of a DUT operation. The power transfer efficiency of the DPI/BCI methods is derived and calculated based on equivalent circuit.

Power Transfer Efficiency Derivation

Equivalent Circuit Model

Simulation and Measurement Results

Conclusions