Abstract
Silicon nanocrystalline particles (ncSi) were fabricated from the Si swarf using the beads milling method. Observed photoluminiscence spectra (PL) of the ncSi in hexane with the dimethylanthracene molecules (DMA) show photoluminescence peaks at energies of 2.55, 2.75, 2.92, and 3.09 eV. The shape of PL spectra corresponds to the vibronic structure of adsorbed DMA molecules. The PL intensity of the ncSi-DMA system increases by ~3000 times by adsorption of DMA on Si nanoparticles. The PL enhancement results from an increase in absorption probability of incident light by DMA caused by adsorption on the surface of ncSi. Theoretical model of the PL experiment was constructed and resulting model parameters were used in analysis of possible PL transitions and charge transfer processes.
Highlights
The properties of many materials change when formed from nanoparticles
With increasing excitation energy the position of Gaussian distribution centre shifts towards higher energies. It is connected with fraction of Si nanocrystals with suitable sizes in a given distribution, which can be excited by used photon energy in the photoluminiscence spectra (PL) experiment
Experimental PL spectra of the ncSiDMA system were analysed by modelling of possible excitation and charge transport processes
Summary
The properties of many materials change when formed from nanoparticles. Nanoparticles have one dimension reaching 100 nanometers or less. Si nanoparticles can be formed by various different methods - laser ablation [7, 8], plasma-enhanced chemical vapor deposition (CVD) [9], hot wire CVD [10], sputtering [11], Si implantation [12], intense pulsed ion beam evaporation [13], and other methods. These methods require vacuum conditions and are time- and cost-consuming in comparison to the beads milling method. Theoretical model was optimized in comparison to the experimental PL spectra in order to extract reliable information about the optical excitation and charge transport processes in studied ncSi-DMA system
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