Abstract
Precursor and substrate costs currently limit the adoption of III-V photovoltaics for large scale manufacturing. Here, we use water-mediated close-spaced vapor transport (CSVT) to produce homojunction GaAs devices with pressed GaAs powder as an alternative to expensive gas-phase precursors. These unpassivated devices reach Voc >910mV, demonstrating the plausibility of CSVT as an alternative method for growth of III-V epitaxial films for photovoltaic devices. We find that Zn-doping of the absorber films decreases after a number of growths cycles using a single source, which suggests an alternative transport agent should be investigated for p-type doping. Performance of these solar cells is largely limited by formation of macroscopic surface defects which we find to be caused by particulate transfer from the source material and the formation of oxide phases during growth. We present strategies for mitigating these defects and improving device performance.
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