Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device.

Rongshan Wei,Yuxuan Du

doi:10.3390/mi10090610

Abstract

A vertical Hall device is an important component of 3D Hall sensors, used for detecting magnetic fields parallel to the sensor surface. The Hall devices described in existing research still have problems, such as large offset voltage and low sensitivity. Aiming to solve these problems, this study proposes a double three-contact vertical Hall device with low offset voltage, and a conformal mapping analysis method to improve the sensitivity of the device. Secondly, an orthogonal coupling structure composed of two sets of double three-contact vertical Hall devices is proposed, which further reduces the offset voltage of the device. Finally, the TCAD simulation software was used to analyze the performance of the devices, and an existing vertical Hall device was compared to ours. The results show that the orthogonal coupling structure in this study exhibits better performance, reaching an average voltage sensitivity of 17.5222 mV/VT and an average offset voltage of about 0.075 mV. In addition, the structure has the same magnitude of offset voltage in the four phases of the rotating current method. This characteristic enables the back-end circuit to more accurately filter out the offset voltage and acquire the Hall signal.

Highlights

The Hall device is the most critical part of a 3D Hall sensor for magnetoelectric conversion [1,2]
Aiming to solve these problems, this paper proposes a double three-contact vertical Hall device structure and its conformal mapping analysis method to improve the performance of the device
Considering the effects of temperature and strain [10,11,12], this paper proposes an orthogonal coupling structure based on double three-contact vertical Hall devices to further reduce the offset voltage

Summary

Introduction

The Hall device is the most critical part of a 3D Hall sensor for magnetoelectric conversion [1,2]. In order to improve the performance of the device, five-contact, four-contact and six-contact structures have gradually appeared [5,6,7,8,9], but they still have problems of high offset voltage and low sensitivity Aiming to solve these problems, this paper proposes a double three-contact vertical Hall device structure and its conformal mapping analysis method to improve the performance of the device. Considering the effects of temperature and strain [10,11,12], this paper proposes an orthogonal coupling structure based on double three-contact vertical Hall devices to further reduce the offset voltage. The Hall electrode and virtual electrode in the original three-contact structure corresponded to the points on the two hypotenuse sides of the parallelogram, respectively.

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Conclusions