Analysis of organic multilayered samples for optoelectronic devices by (low‐energy) dynamic SIMS

Abstract

AbstractThe increasing sophistication of optoelectronic devices requires molecular‐level dimensional control in the fabrication of multilayered structures with specifically engineered interfaces. However, the effectiveness of growth and doping strategies devised to achieve the desired device structures often remains unverified due to the lack of adequate characterization techniques. This is particularly true for devices based on conjugated organic compounds, which find increasing use in energy applications (e.g. organic light emitting diodes and organic photovoltaic cells, etc.). The buried interfaces are simply inaccessible or suffer damage when using conventional characterization techniques. In a current project, we address this challenge by advancing the development of low‐energy (LE) SIMS for the analysis of organic‐based optoelectronic materials systems.In the present study, multilayered organic thin films have been analyzed, varying experimental conditions such as the impact energies for Cs+ bombardment in the MCsx+ and M− mode on a Cameca Sc‐Ultra instrument to investigate the ionization mechanisms as well as the atomic mixing at the interfaces between layers, and the degradation of the organic information. Low‐energy dynamic SIMS proved to be a reliable tool for the characterization of organic multilayered optoelectronic devices: MCsx+ secondary ions provide information about the distribution of elements within the samples, while negative fragments that are characteristic for the different molecules give information about the structure. Copyright © 2010 John Wiley & Sons, Ltd.