Abstract
In this work, we analyze the third and fifth order intermodulation distortion components and its reduction in an 1.3μm transistor laser by feedback harmonic injection technique. The device is modeled by rate equations, which are numerically solved by fourth order Runge–Kutta method. The second harmonic and IMD3 components available at the collector are added with the base current separately, to reduce the distortions. Modulation Bandwidth of 11 GHz and modulation depth of 92.1% are obtained for Ib=7.5 mA. An improvement of 12.64 dB and 4.3 dB are obtained for IMD3 and IMD5, under second harmonic injection scheme, at a bias current of 7.5 mA. In the case of combined second harmonic and IMD3 feedback injection, a reduction of 13.33 dB and 4.49 dB is obtained. Similarly, SFDR of 63.7 dB/Hz2∕3 and 64 dB/Hz2∕3 are obtained for the first and second schemes respectively.
Published Version
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