Abstract
In this paper we present a comparative analysis of noise performance of Carbon Nanotube Field Effect Transistors (CNTFETs) and MOSFET, through the design of two circuits: a basic current mirror and self-bias current mirror, each time with different current values. For this aim we use a semi-empirical compact CNTFET model, already proposed by us, including noise source contributions, and the BSIM4 model for MOS device. Then we analyze and discuss the spectral density of output noise current, comparing the two considered technology. The software used is Advanced Design System (ADS), compatible with the Verilog A programming language.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
