Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates

Abstract

In this study, the multiple fin-type vertical GaN power transistor based on the GaN-on-GaN were analyzed using the two-dimensional technical computer-aided design (2-D TCAD) simulations. In the field of the electric vehicle systems requiring a high operation voltage of 1,000 V or more, the power devices have a large device area because of the long distance between the gate region and the drain region. This problem can be addressed by using the fin-type vertical GaN power transistor, which can reduce the device area due to its vertical channel. For the high current performance, the multiple fin-type structure was required. Thus, we investigated characteristics depending on the number of fin (NSUBfin/SUB). By comparing the on-state drain currents (ISUBon/SUB), the breakdown voltages (BV), and the on-resistances (RSUBon/SUB) with different NSUBfin/SUB, this study provides an understanding of the electrical properties of the multiple fin-type vertical GaN power transistor affected by NSUBfin/SUB.