Abstract
GaN is a suitable material for millimeter-wave high-power IMPATT oscillators because of its superior electronic properties—high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read-type large-signal model. The power density of GaN IMPATT devices at millimeter-wave frequencies is two orders magnitude higher than that of conventional GaAs and Si IMPATT devices. The simulations showed that GaN wurtzite phase p+-n single-drift flat-profile IMPATT oscillators at 300 GHz have an efficiency of 11% and an RF power density of 1.6 MW/cm2 when operated at 800 K. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 257–259, 1999.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
