Performance of millimeter-wave GaInP IMPATT device at elevated temperature

Abstract

GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 422–424, 1999.