Analysis of Mechanical and Electrical Origins of Degradations in Device Durability of Flexible InGaZnO Thin-Film Transistors

Hye-Won Jang,Gi-Heon Kim,Sung-Min Yoon

doi:10.1021/acsaelm.0c00339

Analysis of Mechanical and Electrical Origins of Degradations in Device Durability of Flexible InGaZnO Thin-Film Transistors

Hye-Won Jang, Gi-Heon Kim + Show 1 more

https://doi.org/10.1021/acsaelm.0c00339

Copy DOI

Export

Save

Cite

Journal: ACS Applied Electronic Materials	Publication Date: Jun 24, 2020
Citations: 13

Affiliation: Kyung Hee University, Electronics and Telecommunications Research Institute

#Ga Zn-O #Flexible InGaZnO #Ethylene Naphthalate #Thin-film Transistors #Zn-O Thin-film Transistors #Flexible Thin-Film Transistors #Film Thicknesses #Flexible Thin-Film #Poly Ethylene #Flexible InGaZnO Thin-Film Transistors

Abstract
Full-Text
Similar Papers

Abstract

Listen

Mechanically flexible In–Ga–Zn-O (IGZO) thin-film transistors (TFTs) were fabricated and characterized on poly(ethylene naphthalate) (PEN) with various film thicknesses. The physical origins of mec...

Full Text

Published Version

Check institute access

Open DOI Link

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

More From: ACS Applied Electronic Materials

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.

R Discovery Prime

Analysis of Mechanical and Electrical Origins of Degradations in Device Durability of Flexible InGaZnO Thin-Film Transistors