Analysis of low frequency noise in in situ fluorine-doped ZnSnO thin-film transistors

Xuemei Yin,Wei Zhong,Guoyuan Li,Guijun Li,Yayi Chen,Rongsheng Chen,Hoi Sing Kwok,Lei Lu,Sunbin Deng

doi:10.1063/5.0048125

Abstract

We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing.

Highlights

Great interest has been shown in zinc-oxide (ZnO)based semiconductors as the active layer material in thin-film transistors (TFTs)
The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time
The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 ○C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation

Summary

INTRODUCTION

Great interest has been shown in zinc-oxide (ZnO)based semiconductors as the active layer material in thin-film transistors (TFTs). Among these TFTs, InGaZnO (IGZO) TFTs have proved to be potentially marketable products. Plasma exposure causes surface damage, and it requires a long annealing time at high-temperature to achieve re-diffusion distribution of injected F in the channel material. A high-performance material of in situ F-doped ZTO (ZTO:F) thin film is prepared by the co-sputtering process. The performance of the ZTO:F TFTs with different annealing temperatures and FSnO (FTO) deposition powers is analyzed, and the optimized process conditions are obtained by the comparative study of the electrical and LFN properties

EXPERIMENTAL

RESULTS AND DISCUSSION

CONCLUSION