Analysis of low-energy electron transmission experiments through thin solid xenon films in the elastic scattering region.

Abstract

In this paper, we derive a relation between the current ${I}_{t}$ transmitted by a thin dielectric film as a function of incident electron energy E and the electronic energy-band structure of the film, with application to solid xenon. The analysis of ${I}_{t}$(E) in the elastic scattering region allows one to determine the electronic conduction-band density of states and to calculate the electron mean free path as a function of energy. It provides also a useful tool for determining the quasi-free electron ground-state energy ${V}_{0}$ of the solid.