Analysis of Losses Associated with Series Resistance (Rs) in Simple-Structured c-Si Solar Cells

Abstract

The assessment of photovoltaic devices, which convert light energy into electricity, has become significantly more relevant due to the aspiration to reduce pollution on a global scale. In this context, the pursuit of optimizing the efficiency of converting light energy into electrical energy involves exhaustive studies and structural analyses of solar cells, all directed toward achieving this goal. This study introduces a research proposal aimed at analyzing the losses associated with series resistance (Rs). The analysis takes into account each component comprising this resistance, proposing a network of resistances that precisely models each of these elements. The aforementioned research focused on simple-structured crystalline silicon cells. During this investigation, the junction depth (xj) of the n-p materials was varied, with the aim of achieving efficiencies in the range of 12%. However, in the pursuit of this desired efficiency, a significant impact on series resistance was observed when analyzing the I-V curves of the cells obtained in each manufacturing process.