Abstract
Kesterite materials is popular for low cost photovoltaic and opto-electronic applications. Currently the achievable efficiency of kesterite based CZTSe material is only 12% due to poor quality of material. As an alternative, substituting Sn with Ge as Cu-Zn-Ge-Se (CZGSe) not only enhances the optical properties of materials but also improves the performance of solar cell. The carrier dynamics of the device is examined with variation of different parameters like doping. The worst-case behavior of the device is also examined by adding different loss mechanisms such as deep defects and traps. A remarkable efficiency of 19% and worst case efficiency across a range of 11 to 12% could achieved from the proposed device at a defect concentration of 1×1016 cm−3 eV−1.
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