Abstract
Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits. Additionally, decreasing the dimensions of nanostructures increases the effect of line-edge roughness on the performance of the nanostructures. Efficient methods for characterizing three-dimensional nanostructures are required for process control. Here, extreme-ultraviolet (EUV) scatterometry is exploited for the analysis of line-edge roughness from periodic nanostructures. In line with previous observations, differences are observed between line edge and line width roughness. The angular distribution of the diffuse scattering is an interplay of the line shape, the height of the structure, the roughness along the line, and the correlation between the lines. Unfortunately, existing theoretical methods for characterizing nanostructures using scatterometry do not cover all these aspects. Examples are shown here and the demands for future development of theoretical approaches for computing the angular distribution of the scattered X-rays are discussed.
Highlights
Structural elements of integrated electronic circuits are often formed by grating-like structures with very small periods
The angular distribution of the scattering pattern from the samples with stochastic roughness (Fig. 4) is qualitatively different depending on the correlation length of the roughness
Small differences in the diffuse scattering are observed for different types or correlation lengths of the roughness (Fig. 5)
Summary
Structural elements of integrated electronic circuits are often formed by grating-like structures with very small periods. These lamellar gratings are affected by line-edge roughness that has been identified as the ultimate limiting factor in the production of nanostructured surfaces in the semiconductor industry [1]. State-of-the-art integrated electronic circuits are produced in several steps and any misplacement of the edge position can lead to a complete failure of the features [2]. At present, almost 50% of the processes in production consist of metrology [3]. An in-line nondestructive method with high throughput and sensitivity is sought
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