Abstract
The analysis of internal quantum efficiency data is extended by a new graphical evaluation scheme. On the one hand, our method allows one to estimate the minority carrier diffusion length L and the back surface recombination velocity S. On the other hand the limitations of the internal quantum efficiency method are studied. A mathematical treatment of the equations describing internal quantum efficiency demonstrates that already a single measurement of either the effective diffusion length L eff measured in the near infrared, or the collection efficiency η c measured in the near bandgap wavelength range, yields limits for L and S. More precise values can be obtained in specific cases, if the analysis of L eff and η c are combined. In those cases, information about the accuracy of L and S is obtained. We present a graphical solution for the evaluation and illustrate our method using quantum efficiency data from both thick and thin silicon solar cells.
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