Abstract
Analysis of interface trap charges on RF/analog performances of dual-gate-source-drain Schottky FET for high-frequency applications
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Multiscale and Multidisciplinary Modeling, Experiments and Design
Paper Title
Journal
Date
