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Abstract
The assumption is made that 1/f noise can be nonstationary and/or non-Gaussian. The model explaining this noise by the mobile defects in a semiconductor is used. It is proposed to estimate the accuracy of noise intensity measurement at the output of a bandpass filter to detect deviations from Gaussian behavior and stationarity. The results of measurements on epitaxial GaAs films and bipolar transitor using a specially developed system for digital analysis of signals are presented.
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