Abstract

AbstractA novel technique is introduced to study fast diffusing charged defects in semiconductors. It is based on the capacitance change induced by ion drift in a reverse biased Schottky barrier. It is shown that such charge movement yields exponential capacitance transients, which contain information about the defect concentration and mobility. The method is checked on Li-diffused samples, where the extracted diffusion coefficient are in good agreement with literature data. It is next applied to interstitial copper (Cui) in silicon. In the proposed experiment Cui gives rise to a well defined signal which enables us to investigate near room temperature defect reactions involving Cui. The diffusion data extracted from copper diffused and quenched silicon samples establishes the origin of the signal. Near room temperature precipitation kinetics of Cui are studied and energy barriers are extracted.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.