Abstract
FinFET is the dominating technology for short-channel devices due to its better gate control over the flow of electrons. In this work, the temperature dependence of drain current (I D ) and short channel effects of Bulk FinFET is observed. The FinFET showed I D variation with respect to temperature. The drain current and short channel effects like subthreshold swing (SS), drain induced barrier lowering (DIBL) were investigated with temperature as an input parameter. It was observed that device behaves differently under different mobility models like Lombardi and analytical mobility model. FinFET shows optimum results of on-current, off-current, SS and DIBL at about 250 K Temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
