Analysis of Image Contrast in High-Resolution Images of n-Paraffin Recorded at 400 kV and -167°C

Abstract

Images of radiation-sensitive two-dimensional crystals quite often fail to display the same resolution visible in electron diffraction patterns of these crystals. It is now generally accepted that besides the microscope's envelope functions, radiation damage and the MTF of the film and cryo-holder, beam-induced specimen motion is a major contrast degrading factor. Minimization of this movement proved possible through use of narrow electron beams, i.e. in spot-scanning. Routine high resolution imaging, however, remains a difficult task. We have investigated the possibilities of enhancing the effeciency this goal by using 400 keV electrons. Based upon overall less attenuation from the envelope functions at 400 kV, structure factors at around 3Å resolution would show amplitudes easily twice as large as compared to 100 kV. Further, at 400 kV inelastic scattering would be reduced relative to 100 kV. Moreover, it has been suggested that image contrast would increase roughly proportional to β. Additional advantages concerning for instance Ewald sphere curvature and depth of field have been put forward in Chiu et al.