Abstract
Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 10^5 times. The study is focused on the impact of heavily damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV ^40Ar ions in the fluence range (1 ‒ 4)x10^9 ion/cm^2. It is shown that taking into account only the generation current component is insufficient to explain the experimental I-V curves. Simulating I-V characteristics and the electric field profiles demonstrated arising of a built-in junction in the BPR, which controls hole diffusion at voltages below full depletion voltage. Contribution of this component to the total diode current enabled the agreement between experimental and simulated I-V curves.
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