Abstract
Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 105 times. The study is focused on the impact of heavily damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV 40Ar ions in the fluence range (1-4)·10^9 ion/cm2. It is shown that taking into account only the generation current component is insufficient to explain the experimental I-V curves. Simulating I-V characteristics and the electric field profiles demonstrated arising of a built-in junction in the BPR, which controls hole diffusion at voltages below full depletion voltage. Contribution of this component to the total diode current enabled the agreement between experimental and simulated I-V curves. Keywords: silicon sensors, radiation degradation, current-voltage characteristic, carrier diffusion.
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