Abstract
Electromigration failure statistics and the origin of the lognormal standard deviation for copper interconnects were investigated by analyzing the statistics of electromigration lifetimes and void size distributions at various stages during testing. A statistical correlation between electromigration lifetimes and void evolution was established. Using simulation to fit the experimental data, the parameters influencing the electromigration lifetime statistics were identified as variations in void sizes, geometrical and experimental factors of the electromigration experiment, and kinetic aspects of the mass transport process, such as differences in the interface diffusivity between the lines.
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