Abstract
The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) character-istic curve, which is in turn determined by device and material properties. In this study, an investigation of the performance and device parameters of photovoltaic single crystalline silicon (Si.) solar cell of the construction n+pp++ PESC(Passivatted Emitter Solar Cell) at different conditions of solar irradiance, title angle and mirror boosting effects had been studied. Also the paper reports on the performance data of the Si. cell, using standard I–V characteristic curves to obtain output parameters and to show that there are possible performance degrading defects presents.
Highlights
Many photovoltaic (PV) devices exhibit a poor performance in the field
The electrical performance of a photovoltaic (PV) silicon solar cell is described by its current–voltage (I–V) characteristic curve, which is in turn determined by device and material properties
The efficiency for single-crystal solar cell decreases as the operating temperature of cells increases
Summary
Many photovoltaic (PV) devices exhibit a poor performance in the field (i.e., mainly in actual use conditions). The Standard Test Conditions (STC) combines the irradiation of a clear summer day, the cell/module temperature of a clear winter day and the solar spectrum of a clear spring day These measurement conditions obviously do not represent real operating conditions of PV devices at the site of installation. The current–voltage (I–V) characteristic of the solar cell describes its electrical performance These I–V characteristics are determined by parameters such as diode saturation current, diode ideality photo generated current and the presence of parasitic resistances (series and shunt resistance). These parameters depend, in turn, on the solar cell structure, material properties and operating conditions. The performance characteristics for a silicon solar cell with title angle and mirror boosting effects will be studied
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