Abstract
In this communication, we examine the influence of the SL period of InAs/GaSb superlattice (SL), with diverse InAs to GaSb thickness ratio, on the material and device properties of midwave infrared pin photodiodes. Three SL devices made of three different periods, but exhibiting the same cut-off wavelength at 5 μm at 77K, were grown by molecular beam epitaxy on p-type GaSb substrates. Optical and electrical characterizations (photoluminescence, current-voltage, capacitance-voltage, and photoresponse measurements) were performed and analyzed in order to explain the results obtained. Our investigations show the strong influence of the SL composition on both the material and photodetector properties, such as residual doping concentration, shape of the response spectra and dark current values.
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