Abstract
In this paper, the electro-optical properties of InAs/GaSb superlattice (SL) midwave infrared photodiodes with different periods were investigated. Three devices with different SL periods, but the same cut-off wavelength at 5 µm at 77 K, were grown by molecular beam epitaxy on p-type GaSb substrates. The optical and electrical behaviours were characterized and analysed. Our investigations show strong influence of the SL composition on both the material properties and photodetector performances, such as the background doping concentration, shape of the response spectra and the dark current behaviours.
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