Analysis of effective channel length variation for thin-film transistors with edge waviness in source/drain electrodes

Abstract

We analyzed the effective channel length variation of hydrogenated amorphous silicon thin-film transistors (TFTs) that have wavy edge source/drain (S/D) electrodes. Edge waviness is frequently observed when narrow electrodes are fabricated by using printing methods. We used hydrogenated amorphous silicon (a-Si:H) TFTs and photolithographically patterned wavy edge S/D electrodes for accurate analysis. From a transmission line method (TLM), we successfully related the channel current variation to the variation of current transfer length ( L T_wavy) of the wavy edge S/D electrodes originated from current spreading and geometrical edge waviness effects which can be separately extracted.