Abstract
The three-dimensional generation distribution by an electron beam in GaAs was investigated by measuring EBIC with a combination of normal incidence and line scan methods in the same sample. From the theoretical calculation for the line scan method, the profile of the EBIC curves expresses the generation distribution when the accelerating voltage of the electron beam is high, and the dimension of the generation region is larger than the diffusion length. The three-dimensional generation distribution based upon the experimental results of the normal incidence could explain the experimental results of the line scan method. The centre of the generation region was located at the point of 0.13 of the maximum electron range, and the radial distribution from the centre was shown to be gaussian with an exponent of 5.4-8.2. The value of 3.8-4.4 eV for the electron-hole pair creation energy in GaAs was determined taking the surface recombination effect into account.
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