Abstract
Numerical simulation is used to analyse a novel Double Trench Insulated Gate Bipolar Transistor (DT-IGBT) structure. It has been found that the DT-IGBT structure can be used to achieve a switching loss similar to that of the power MOSFET transistors. These results are encouraging for the development of DT-IGBT type devices as the next generation of IGBTs for the high frequency, high power applications.
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