Abstract
A Schottky diode based linearization network is investigated for distortion reduction in 1.3 μm Transistor Laser for the first time. Second harmonic and third order intermodulation distortion (IMD3) are numerically analyzed in transistor laser using single and dual Schottky diode based predistortion techniques. An improvement of 13.56 dB and 15.53 dB are obtained for IMD3 under single and dual Schottky diode predistortion techniques respectively. Further, an enhancement in SFDR of 60.54 dB Hz2/3 and 62.92 dB Hz2/3 are observed for the above schemes. Moreover, the bandwidth is improved to 12 GHz and 13.8 GHz for single and dual Schottky diode predistortion techniques, whereas it is only 10.96 GHz without predistortion, under similar bias conditions.
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