Analysis of Discharge Failure Mechanism of IGBT Power Modules

Abstract

IGBT power modules are usually used as circuit-breaking components in power systems, and are widely used in solid-state DC circuit breakers, hybrid DC circuit breakers, all-electric aircraft, high-speed railways, new energy vehicles, and power transmission systems. In these systems, IGBT power modules are usually faced with extremely harsh working conditions and there is a failure risk. Insulation degradation should be a cause for concern as a potential path of power module failure. In this paper, the discharge phenomena of the IGBT power module were observed based on Intensified Charge Coupled Devices (ICCD), and the triple junctions composed of copper–ceramic–silicone gel inside IGBT were found as the discharge points. Furthermore, the directed bonded copper (DBC) ceramic filled with silicone gel was used as a test sample to study the discharge failure process, including the partial discharge (PD), surface charges, and electric trees. The mechanism of discharge failure is discussed and analyzed. The insulation degradation process is accompanied by phenomena such as severe partial discharge and rapid electric tree growth. This research provides support for the analysis idea and guidance of the research method for the cause of power module failure.