Analysis of degradation of Sb2Se3 thin film solar cells deploying a time-dependent approach linked with 1D-AMPS simulation

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In this paper, we have developed a time-dependent model to study defect growth in the absorber layer of Sb2Se3 thin film solar cells. This model has been integrated with the AMPS-1D simulation platform to investigate the impact of increasing defect density at different positions within the Sb2Se3 layer on the electrical parameters of the solar cell. We adopted the Gloeckler standard model for thin films in AMPS to represent Sb2Se3 materials. The study focuses on tracking the degradation of device performance parameters as donor-like mid-gap states accumulate in the Sb2Se3 layer over time. We monitored the variation of key electrical parameters, including efficiency (η), fill factor (FF), open-circuit voltage (Voc), and short-circuit current (Jsc), at three different positions: the interface with CdS, the bulk of the Sb2Se3 layer, and the interface with the top contact. These positions are susceptible to increasing defect density during prolonged operation and irradiation. To pinpoint the most sensitive part of the Sb2Se3 layer to defect accumulation, we divided the layer into three sub-layers. Our simulation results highlight that the CdS/Sb2Se3 interface is the most vulnerable position in the cell when it comes to defect accumulation. The practical implication of this study is that special attention should be given to the CdS/Sb2Se3 interface during material deposition and the development of high-stability Sb2Se3 thin film solar cells.“