Abstract
As a new general photovoltaic, antimony selenide (Sb2Se3) thin-film solar cell is now limited by the open-circuit voltage (Voc). In this study, an ultra-thin CdS:Al film obtained by co-sputtering CdS and Al targets as a N+ layer was employed in Sb2Se3 thin-film solar cells. The desposition condition of CdS:Al was optimised and solar cells with FTO/CdS:Al/CdS/Sb2Se3/Au structure were fabricated. Compared with the device without an N+ layer, the device with the N+ layer exhibited preferable photoelectric response, enlarged depletion-region width, better diode quality and reduced carrier recombination. As a result, improvements of 19% in Voc and 30% in efficiency of the Sb2Se3 thin-film solar cell were realised.
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