Analysis of D.C Parameters of Short-Channel Heterostructure Double Gate Junction-Less MOSFET Circuits Considering Quantum Mechanical Effects

Abstract

In this article, the electrical behavior of short channel SiGe Heterostructure Junction-Less DG-MOSFET have been studied by incorporating the quantum mechanical effect and short channel effects. Analytical model and simulation result shows how the device process parameters like gate oxide thickness, silicon thickness, channel doping concentration, channel or gate length etc. have an impact on the D.C parameters like threshold voltage, surface potential. DIBL and threshold voltage of the nanoscale JL-MOSFET are also analyzed by considering the QME to raise the accuracy of the derived models. Extensive simulations are performed in SILVACO ATLAS TCAD tool to validate the proposed models. It is quite evident that the derived models and simulation results are in good agreement for a wide variation of process parameters. Schrodinger model has been used in ATLAS simulation platform to validate the derived analytical model considering QME. However, comprehensive analysis of the short channel SiGe Hetero-structure Junction-Less Double Gate Metal Oxide Semiconductor Field Effect Transistor gives a better view and understanding of D.C characteristics of the device. At the end, D.C characteristics (power dissipation, propagation delay, power-delay product) of an inverter circuit has been taken under consideration to check the impact of QMEs on circuit performance.