Abstract
Randomly oriented polycrystalline silicon (poly-Si) thin films with a typical grain size of 20×2 µm2 grown by continuous-wave laser lateral crystallization (CLC) were obtained. It was found that CLC poly-Si thin films have a large tensile strain corresponding to 0.6% of single-crystalline Si lattice in the in-plane direction. These results suggest that there is a possibility that not only grain size but also the large tensile strain in in-plane direction can affect thin film transistor (TFT) performance.
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