Abstract
The optical coupling between dual elements of photonic crystal vertical cavity surface emitting laser arrays is characterized. The optically coupled microcavity lasers have independent bias injection currents. Output power and beam analysis measurements are used to quantify the effects of optical coherence in nominally 850 nm emitting arrays. Modelling and experiment show how the optical coupling is influenced by photonic crystal lattice period and the independent current injection into the elements.
Highlights
C OHERENTLY coupled two-element arrays of photonic crystal (PhC) vertical cavity surface emitting lasers (VCSELs) have been shown to exhibit novel dynamic properties such as increased small-signal modulation bandwidth [1, 2], enhanced digital data transmission [3], and reduced intensity noise and harmonic distortion [4]. These properties make them attractive for nextgeneration optical communications systems, the modulation enhancement is dependent on the engineering of the array structure to enable effective optical coupling as well as the electrical tuning of the bias injection currents to operate at the prerequisite coherently coupled regime
Many different methods of coupled VCSEL array characterization have been previously proposed with relative strengths and weaknesses [9]
Semiconductor lasers have significantly evolved over the course of the illustrious career of Prof
Summary
C OHERENTLY coupled two-element arrays of photonic crystal (PhC) vertical cavity surface emitting lasers (VCSELs) have been shown to exhibit novel dynamic properties such as increased small-signal modulation bandwidth [1, 2], enhanced digital data transmission [3], and reduced intensity noise and harmonic distortion [4] These properties make them attractive for nextgeneration optical communications systems, the modulation enhancement is dependent on the engineering of the array structure to enable effective optical coupling as well as the electrical tuning of the bias injection currents to operate at the prerequisite coherently coupled regime. A half century later we follow his pioneering work and leverage many of his foundational discoveries to report on the lasing characteristics of more complexly structured, but essentially doped (Al)GaAs semiconductors
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