Analysis of CNTFET Performance in Sequential Device Using Shift Register for Low Power Applications

Abstract

Nanotechnology has touched the post silicon era where the MOSFET has touched its least scaling value according to Moore’s law. Further lowering in the technology nodes had bring out Short channel effects that are reflected in reliability issues to electronic components which we could visualize in our day today activities. The alternative and the best replacement for CMOS technology is Carbon Nano Tube Field Effect Transistors (CNTFET). These Carbon nanotubes because of their distinctive nature in structural, electrical and mechanical properties will be the building blocks for future Nano electronics. This work focused on design and analysis of Sequential logic devices using CNTFET and comparative analysis with CMOS performance. For Sequential device analysis, we considered Shift register as these forms the basic building block of memory devices. These devices helps in storage or in transfer of binary data. For designing Shift registers we proposed Pulsed latches rather than the regular flip-flops as they consume more power. The design has been implemented in both CNTFET and CMOS technologies for 32nm technology node. The comparative findings show that our suggested job has better Power, Delay and Power Delay Product performance.