Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications

Abstract

This research article reports the investigation of performance optimization of the field-plated and recessed gate III-Nitride nano-HEMT on β-Ga2O3 substrate. The optimization is done for channel length, gate length and suitable gate position in order to achieve a better DC and RF characteristics for high power and THz applications. The breakdown voltage and frequency characteristics of HEMTs are typically traded off. However, the proposed III-Nitride nano-HEMT grown over β-Ga2O3 substrate incorporating an optimal channel length, gate size, and suitable gate position exhibit improved breakdown voltage characteristics without sacrificing high-frequency properties. The III-nitride HEMT comprising of 250 nm channel length, 20 nm gate length, and gate position of 120 nm from source and 110 nm from drain exhibited the improved breakdown voltage characteristics and superior RF properties. The major factor contributing to this outcome is an improved lattice compatibility of substrate material with the buffer. This study intends to advance a thorough understanding of a breakthrough III-Nitride HEMT grown on β-Ga2O3 substrate, thereby facilitating further research in this state-of-the-art technology.