Abstract
The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained.
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