Analysis of boron profiles as function of nitrogen content in silicon

Abstract

In this paper, the Secondary Ion Mass Spectroscopy (SIMS) technique is used to study the experimental depth concentration profiles of boron, nitrogen, and other expected atoms in amorphous nitrogen doped silicon (NiDoS) layers deposited at Td = 460 °C by low-pressure chemical vapor deposition (LPCVD) process from disilane. It has been observed that the reduction of implanted boron penetration is important when the film deposition temperature is low and the nitrogen in-situ doping step is initially improved. And, the simulation results with the experientially measured projected range values using SIMS are in good agreement.