Abstract
Abstract An analysis of an optical receiver front-end is presented. Several possible designs, which can be envisaged for In-GaAsP integrated on semi-insulating InP, are discussed. A normally-on MISFET and a bipolar transistor are considered as active components in conjunction with a pin or avalanche photodiode. The minimum detectable optical power is calculated in dependence on the bandwidth determined by the circuit input impedance. The parameters used in the calculation are based on published results. Suggestions are made as to how the circuits can be fabricated from epitaxial layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
