Abstract
AbstractWe have developed a molecular-dynamics technique for determining the adhesion strength of the interfaces between different materials. In this technique the extended Tersoff-type potential is applied to calculate the adhesive fracture energy defined as the difference between the total potential energy of the material-connected state and that of the material-separated state. The adhesion strength of metal/dielectric interfaces as well as metal/metal interfaces is discussed based on this fracture energy. We used this technique to determine the adhesion strength of the interfaces between ULSI-interconnect materials (Al and Cu) and diffusionbarrier materials (TiN and W). The calculated adhesive fracture energy shows that the adhesion strength increases in the order: Cu/TiN, Cu/W, Al/W, and Al/TiN. Because this result was confirmed by scratch testing on the film-laminated structure, this technique is considered to be effective for determining the adhesion strength.
Published Version
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