Analysis of ρ xx minima in surface quantum oscillations on (100) n-type silicon inversion layers

Abstract

The analysis of resistance minima ρ xx min in surface quantum oscillations of n-type silicon inversion layers shows that for samples of high mobility ρ xx min depends on the energy gap in the density of states between the broadened Landau levels. For a constant magnetic field, the energy gap is determined by the level width, the Landé g-factor, and the valley splitting. From our analysis of the temperature dependence of ρ xx min and from measurements in a tilted magnetic Held, values for the level broadening and the g-factor could be deduced. For the first time experimental g-values were determined at Fermi energies where no enhancement due to many body effects is expected.